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 BA 586
Silicon PIN Diode
Preliminary Data
q q q
BA 586
Current-controlled RF resistor for switching and attenuating applications. Frequency range above 1 MHz Designed for low IM distortion
Type BA 586
Marking white P
Ordering Code (tape and reel) Q62702-A930
Pin Configuration
Package1) SOD-123
Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
Symbol VR IF Top Tstg
Values 50 50 - 55 ... + 150
Unit V mA
- 55 ... + 125 C
450
K/W
1)
For detailed information see chapter Package Outlines.
BA 586
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 50 mA Reverse current VR = 50 V Diode capacitance f = 1 MHz, VR = 50 V f= 100 MHz, VR = 0 V Forward resistance f = 100 MHz IF = 10 A IF = 1 mA IF = 10 mA Zero bias conductance f = 100 MHz, VR = 0 V Series inductance Symbol min. VF IR CT - - rf - - 6.5 gp LS - - 2400 58 7.8 40 2 - - 10 - -
S
Values typ. - - max. 1.15 50 - -
Unit V nA pF
0.23 0.2
0.35 -
nH
Diode capacitance CT = f (VR) f = 1 MHz / f = 100 MHz
Forward resistance rf = f (IF) f = 100 MHz


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